Low-temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn-doped InP layers using tertiarybutylphosphine

Abstract

High purity Zn doped InP layers were grown by rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The best quality layer, which was grown at P:In ratio of 75, temperature as low as 525 °C, pressure of 2 Torr and growth rate of 2 nm/s, exhibited electron mobility of 80 cm2 V−1 s−1 and Hall carrier concentration of 3.5×1018 cm−3 at room temperature. The stoichiometry of the InP Zn-doped layer was excellent, regardless of the Zn content in the reactive gas mixture. The crystallographic defect density and the surface morphological particle concentration, however, were found to be strongly dependent on the Zn concentration.