Abstract
High-quality InP layers with low impurity backgrounds have been grown by means of the rapid thermal low pressure metalorganic chemical vapor deposition technique, using tertiarybutylphosphine as the phosphorus source. The films were grown at a P:In ratio of 75 or higher, temperatures between 500 and 525 °C, a pressure of 2 Torr and growth rates as high as 2 nm/s. The undoped films were defect-free with exhibited featureless morphologies, and minimum backscattering yields (Xmin) as low as 3.1%, measured by ion channeling. The electrical quality of the films (Nd=2.5×1016 cm−3, μ=4200 cm2/V s) was also excellent.
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