Abstract
InAs layers were deposited on glass and plastic (polyimide) film substrates by molecular-beam deposition at substrate temperatures of 180-280degC. Atomic force microscopy revealed flat surfaces with RMS roughness of about 10 nm. X-ray diffraction patterns indicated that the InAs layers are poly crystalline textured in the (111) plane with crystallite sizes around 30 nm. Hall effect measurements showed that the films exhibit the n-type conduction with electron concentrations around 5 times 1018 cm-3. An InAs film deposited on polyimide showed electron mobility of 460 cm2/Vs at room temperature.
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