Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition

Abstract

InAs layers were deposited on glass substrates by molecular-beam deposition at substrate temperatures of 180–240 °C at As/In beam equivalent pressure (BEP) ratios of 3–30. X-ray diffraction (XRD) patterns indicated that the InAs layers are polycrystalline and are more preferentially textured in the (111) plane when deposited at higher temperatures and lower As/In BEP ratios. Room-temperature Hall effect measurement showed that the films deposited at an As/In BEP ratio of 30 exhibit n-type conduction with electron concentrations of approximately 3 ×1018 cm-3, being almost independent of substrate temperature. With decreasing As/In BEP ratio from 30 to 3 at a fixed substrate temperature of 240 °C, the electron concentration decreased to 1.5 ×1018 cm-3 and the electron mobility increased to 610 cm2/(V·s). Preliminary results of the deposition on plastic substrates showed an electron mobility of 460 cm2/(V·s) when the layer was deposited at 280 °C at an As/In BEP ratio of 30.