Low-frequency noise properties of double channel AlGaN/GaN HEMTs

Abstract

Low-frequency noise in MOCVD-grown AlGaN/GaN/AlGaN/GaN double channel high electron mobility transistors (HEMTs) on sapphire substrate was investigated over a wide range of temperatures from 80 K to 300 K. Generation–recombination (g–r) noise was observed arising from the traps with activation energies 140 meV, 188 meV and 201 meV. Hooge parameter was estimated to be 1.6 × 10 −3 at room temperature. Our work demonstrates good dc and low-frequency noise properties for the device.