Abstract
AbstractWe present a numerical investigation on the DC and AC characteristics of AlGaN/GaN single (SCHEMT) and double channel high electron mobility transistors (DCHEMT) using the APSYS simulation program. The simulation results indicate that the DCHEMT has a slightly wider range of transconductance and cut‐off frequency for device operation at high current levels than SCHEMT. Besides, we also examine the effect of barrier layer thickness between the two channels in DCHEMT on the transconductance profile. It is found that the operation range of transconductance can be tailored by adjusting the barrier layer thickness. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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