Abstract
AbstractThis paper describes the 2DEG properties of InGaN/InN/InGaN double channel high electron mobility transistor (DHEMT). These include an in‐depth theoretical investigation of 2DEG sheet carrier concentration and mobility. The 2DEG mobility is calculated using ensemble Monte Carlo taking into account all relevant scatterings. The calculated sheet carrier concentration reaches as high as 1.77×1014 cm‐2 for DHEMT. While for single channel high electron mobility transistor (SHEMT) the calculated sheet carrier concentration was found to be 7.06×1013 cm‐2. The maximum total 2DEG mobility is found to be around 12×104 and 8×104 cm2V‐1s‐1, respectively, for DHEMT and SHEMT for a sheet carrier concentration of ns = 5×1012 cm‐2 at 77 K. Thus, the 2DEG sheet carrier concentration and mobility for dual channel is higher than conventional single channel HEMTs. The high values of 2DEG sheet carrier concentration and mobility strongly suggest that the InGaN/InN/InGaN based double channel HEMT is very promising for the fabrication of high performance high speed device (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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