Low-frequency noise of advanced memory devices

Abstract

This paper reviews the application of low-frequency noise and Random Telegraph Signal (RTS) studies on advanced memory devices, namely, Metal-Insulator-Metal capacitors with SrTiOx as insulator, peripheral transistors for Dynamic Random Access Memories and Resistive Random Access Memory structures. In the first two cases, flicker noise is used to analyze the quality or defectiveness of the gate stack, while in the third case, both flicker and RTS noise provide information on the carrier trapping and transport.