Abstract
A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental data obtained on advanced CMOS generations. The application of low frequency noise measurements as a characterization tool for large area MOS devices is also discussed. The main physical characteristics of random telegraph signals (RTS) observed in small area MOS transistors are reviewed. The impact of scaling down on the low frequency noise and RTS fluctuations in CMOS silicon devices is also addressed. Experimental results obtained on 0.35-0.12 μm CMOS technologies are used to predict the trends for the noise in future CMOS technologies e.g. 0.1μm and beyond. The formulation of thermal noise underlying the low frequency 1/f or RTS fluctuations in MOSFETs is also recalled for completeness.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
