Low-frequency noise in semiconductor devices - state-of-the-art and future perspectives plenary paper

Abstract

Noise is both an asset and a hindrance. Noise as an asset represents a powerful non-destructive tool to study defects, track manufacturing processes and better understand aspects of charge transport in semiconductor devices. On the other hand, noise as an undesired, ever-present phenomenon, limits, for example, the sensitivity of electronic devices and the charge sensitivity of sensors and memory elements. In this plenary talk, we will present a detailed review of low-frequency noise and noise spectroscopy in the most important and widely semiconductor devices as well as transistors and sensors fabricated using emerging semiconductor materials. The review will be based on our own work, as well as the extensive work of numerous other researchers. More specifically, we will present, analyze and discuss a compilation of research results from the following devices - planar and non-planar metal-oxide-semiconductor field-effect transistors (MOSFETs), bipolar transistors, silicon-based optical imagers, biosensors, organic/polymeric thin film transistors and transistors using two-dimensional materials. For some semiconductor devices, extensive results will be taken from a period spanning several decades. These experimental results will allow us to investigate trends of the noise evolution which are then used for analyses, modeling and interpretation. Further, the model will be based on physical principles that will be guided and influenced by the large collection processed experimental data. The final part of the talk will provide some perspectives on future work on low frequency noise in current and emerging semiconductor devices, as well as some important practical applications of noise spectroscopy.