Noise in Semiconductor Devices

Abstract

This chapter focuses on noise in semiconductors devices. There are at least two important facets to the subject of noise in semiconductor devices. First is that noise results from basic physical processes which make a device possible; a study of device noise can lead to increased understanding of device physics. Second, noise sets the ultimate limitation of the usefulness of a device as a linear amplifier; it is important to the engineers using a device that they are able to optimize the design for maximum signal-to-noise performance commensurate with other requirements. This chapter presents a summary of the theory of noise in semiconductor devices with emphasis on junction diodes, bipolar transistors, and field effect transistors. Theory of noise in semiconductor devices is discussed. Experimental verification of the theory is done. Concepts related to practical low-noise amplifiers are explained. The chapter shows that the noise performance of most semiconductor devices is described by a relatively simple, well-behaved set of “internal” noise generators.