Year-end Sale % OFF 
Abstract
Further reduction of sheet/contact resistance is observed and shallower junction is obtained using F+B implant instead of conventional B, BF2, or BF2+B implant. A deeper fluorine implant to increase the distance between F and B causes a higher retained boron dose while making the junction depth shallower upon annealing. Junction depth reduction is achieved by making the junction boundary abrupt near the junction depth, and higher retained boron dose leads to a reduction of sheet and contact resistance. Even if our experimental scheme practically focuses on the deep contact junction, the abrupt junction profile with high activation efficiency obtained by shifting the F implant deeper than B implant is also attractive for the ultrashallow source/drain extension technology for sub-0.1 μm p-type metal–oxide–semiconductor devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
