Abstract
Low voltage operation of picene thin film field-effect transistor (FET) has been realized with 40 nm thick SiO2 gate dielectrics coated by two polymers, Cytop™ and polystyrene. The picene FETs operated in low absolute gate voltage |VG| below 15 V for Cytop™ coated SiO2 and 30 V for polystyrene coated SiO2 gate dielectrics, and they showed a significant O2 gas sensing effect down to ∼10 ppm. Photoemission spectrum clarified that O2 molecules penetrate into the thin films at O2/picene mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated SiO2.
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