Abstract
C 60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C 60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm 2 V −1 s −1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm 2 V −1 s −1. The μ values recorded for C 60 and picene thin film FETs are comparable to those for C 60 and picene thin film FETs with Au electrodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
