Abstract
Recent success in the fabrication of the bulk ZnTe has enabled the realization of large area single crystal substrates. The growth and application of ZnTe homoepitaxial layers by molecular beam epitaxy should involve the pretreatment of the substrate surface prior to the nucleation. An atomic hydrogen treatment was performed to remove the surface oxide of ZnTe. The oxide could be removed at around 100 °C with the assist of the atomic hydrogen beam. The reconstructed surface could be achieved by annealing at around 230 °C. The two dimensional nucleation was also confirmed. The homoepitaxial layer has shown such a high quality that interface, or defects could not be confirmed by the transmission electron microscopy.
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