Abstract
High quality ZnSe(100) substrates have been used for homoepitaxial growth by molecular beam epitaxy. A chemical pretreatment suitable for ZnSe substrate preparation is determined from x-ray photoemission spectroscopy studies. Thermal cleaning processes for the ZnSe(100) surface were investigated by insitu reflection high energy electron diffraction and the surface phase diagram for ZnSe(100) was obtained for the first time. The low temperature photoluminescence spectra recorded from homoepitaxial layers exhibit unsplit free and bound exciton transitions with strong intensities. The full widths at half maximum of the (400) x-ray diffraction spectra for ZnSe homoepitaxial layer were 17≈31 arcsec.
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