Abstract
ZnCdSe/ZnMgSe and ZnSe/ZnMgBeSe distributed Bragg reflectors have been grown on ZnSe (1 0 0) substrates by molecular beam epitaxy. Optical and structural properties were investigated. A calculation was applied to the design of II–VI DBRs on ZnSe substrates. The comparison of theoretical and experimental reflectivity spectra proposes that the discrepancy of maximum reflectance is related to the heterointerface roughness in the non-pseudomorphic system. For the ZnCdSe/ZnMgSe system, DBRs contained 10.5 and 20 stacks of alternated quarter-wavelength layers were obtained. The maximum reflectance was around 80% at 560 nm for 20 pairs of Zn 0.86Cd 0.14Se/Zn 0.79Mg 0.21Se. The ZnSe/ZnMgBeSe DBR structures show the abrupt heterointerface and good smoothness of surface. The 12 pairs of ZnSe/Zn 0.72Mg 0.21Be 0.07Se quarter-wavelength layers were deposited and maximum reflectance was at 605 nm. The peak position and reflectance correlate well with theoretical prediction.
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