Abstract
The influence of the Schottky gate shape on the low temperature conductivity in gated Si-6-doped GaAs was investigated. For samples with a gate covering the top and also the mesa edge of the structure, an unexpected low-temperature saturation of the variable-range-hopping conductivity (VRH) was observed at T < 1 K. We show that this effect is definitely connected with the gate covering the mesa edge. Sample resistivity in saturation regime increases with increasing negative gate voltage. Possible influence of a strong lateral electric field, induced by the gate covering the mesa edge, on the low temperature conductivity of depleted 2D layer is discussed.
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