Abstract
ABSTRACTAmorphous SiO2 and amorphous Si films were deposited on glass using radio frequency (RF) sputtering, and were subsequently poly-crystallized using blue-laser diode annealing (BLDA) scanned by a CW beam. Ne, which has a smaller atomic radius than Ar, was used for the sputtering of the Si film. For the gate insulator, a small amount of O2 gas diluted with Ar was flown during the sputtering to optimize the SiO2 film with a low leakage current. A simple TFT structure with a metal source and drain (S/D) was adopted to realize a low-temperature process with a low fabrication cost. Furthermore, to confirm the effectiveness of the sputtered gate oxide, a poly-Si TFT adopting a Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) for the channel was fabricated and was compared with the TFT with a sputtered Si film for the channel. Reasonable Vg-Id characteristics were obtained for both poly-Si TFTs. The TFT structure with a metal S/D formed through a low-temperature sputtering-based process is expected to be applied to Si TFTs on an arbitrary flexible panel.
Highlights
Low-temperature poly-Si (LTPS) thin-film transistors (TFTs) [1,2,3] have been extensively studied for application in the active-matrix liquid crystal display (AM LCD) and the active-matrix organic light-emitting diode (AM OLED) display on glass even on flexible panels [4, 5]
To study the effect of the impurity species incorporated into a Si film on the crystallization behavior using blue-laser diode annealing (BLDA), a heavily phosphorus-doped Si film was deposited via radio frequency (RF) sputtering using Ne or Ar as the sputtered gas against a single-crystalline Si target with low resistivity (0.0013–0.0016 cm, ∼ 6 × 1019 cm−3)
A high-quality sputtered gate SiO2 film was obtained by optimizing the radio frequency (RF) sputtering
Summary
Low-temperature poly-Si (LTPS) thin-film transistors (TFTs) [1,2,3] have been extensively studied for application in the active-matrix liquid crystal display (AM LCD) and the active-matrix organic light-emitting diode (AM OLED) display on glass even on flexible panels [4, 5]. For the low-temperature fabrication of the poly-Si TFT system on plastic, the de-hydrogenation annealing step before excimer laser annealing (ELA) for the Si film deposited using plasma-enhanced chemical vapor deposition (PE CVD) limits the maximum process temperature of the TFT. As the crystallization of a Si film on a flexible plastic via BLDA as well as via ELA has been realized [16, 17], a low-temperature process for TFT fabrication is expected and should be optimized
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