Abstract
GaAs layers were grown on Si substrates at 450°C by alternating the gas flow of trimethyl gallium and arsine. Raman spectra showed that the intensity of the longitudinal optical phonon peak taken from GaAs was increased by this approach. Furthermore, transmission electron microscopy showed the reduction of the lattice turbulence and many threading dislocations, which were observed in GaAs layers grown on Si without this approach.
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