Abstract
The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. The proposed hybrid structure was synthesized on a Si (111) substrate using the high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio to protect the graphene layer from thermal damage during the growth of n-GaN nanorods. Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy (HR-TEM), facilitated the excellent transport of the generated charge carriers through the photoconductive channel. The highly matched n-GaN NR-graphene hybrid structure exhibited enhancement in the photocurrent along with increased sensitivity and photoresponsivity, which were attributed to the extremely low carrier trap density in the photoconductive channel.
Highlights
NR-graphene heterostructures, the semiconductor chip temperature can be reduced by dispersing the heat via the high thermal conductivity of graphene[18,19]
The associated G/2D band and the full-width at half-maximum (FWHM) of the 2D-band maps in Fig. 2c illustrate the uniformity of the graphene films over large areas that predominantly exhibit typical monolayer properties, as identified by the IG/I2D ≤ 0 .38 and the FWHM of the 2D band of ≤ 38 cm−1
This study demonstrates the superior photoconductive behavior of an n-GaN NR-graphene hybrid device structure synthesized on a Si (111) substrate using a high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio
Summary
NR-graphene heterostructures, the semiconductor chip temperature can be reduced by dispersing the heat via the high thermal conductivity of graphene[18,19]. Low-cost solar cells that contain less semiconductor material can be produced using these GaN NR-graphene heterostructures. The vapor-liquid-solid (VLS) technique[23] using metal-organic chemical vapor deposition (MOCVD)[24] facilitates nanorod formation with precise growth control and mass production. It is the most cost-effective technique for growing GaN nanorods. Graphene exhibits high chemical stability, it is very difficult to form a hybrid-heterostructure by integrating it with a semiconductor material[15]. We sought to form a GaN NR-graphene hybrid structure using the MOCVD technique while maintaining the original properties of the GaN nanorods and graphene. The realization of a high-performance ultraviolet photoconductive device using this hybrid structure was another purpose of this work
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