Abstract
A new structurally defined precursor compound for the low-temperature metalorganic chemical vapor deposition (MOCVD) of CoAs thin films is reported. The easily accessible 1,3-bis(tert-butyl)-2-[tetracarbonyl-cobalt(-l)]-1,3,2-diazarsolidine was decomposed by hot-wall low pressure CVD. Thin films of cobalt arsenide with retention of the stoichiometry of the precursor (Co:As=1/1) were formed at temperatures as low as 210 °C. Electron micrographs show uniform films, energy dispersive x-ray spectroscopy, and Auger electron spectroscopy confirm their bulk composition, and powder diffraction patterns and conductivity measurements prove their crystallinity and electrical properties.
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