Abstract
We present the regrowth of GaAs(0 0 1) on magnetic MnGa films, which are themselves grown epitaxially on GaAs(0 0 1) substrates. The diffusion of Mn into the GaAs overlayer, caused by a strong reactivity between Mn and As, is suppressed successfully by reducing the growth temperature to 200°C. The quality of the GaAs layers is sufficient for the growth of epitaxial MnGa/GaAs/MnGa trilayers showing magnetic interlayer coupling.
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