Abstract
InP-InGaAsP-InP double-heterostructure wafers with 1.5–1.6-μm wavelength range quaternary layers have been grown by liquid phase epitaxy. Any difficulties due to dissolution of the quaternary active layer during the growth of the following InP confining layer are avoided by reducing the liquid phase epitaxy growth temperature to 592 °C, nearly 40° lower than the temperature most frequently used. The lasers fabricated from the wafers operate continuously at 20 °C and emit light at 1.55 μm. The threshold current under cw operation was 250 mA and that under pulsed operation was 160 mA.
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