Abstract
A low temperature liquid phase epitaxial growth technique for obtaining Fe doped high resistivity InP layers was developed. The addition of Al to the growth solution containing Fe was found to be effective for incorporating a large quantity of Fe in InP epitaxial layers. Thus, InP layers with resistivity of ∽ 10 4 Ω cm were successfully achieved at growth temperatures of 590 and 630°C by the present technique.
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