Abstract
In this work we study the Photoluminescence (PL) of AlGaAs/GaAs single quantum well (SQW) grown by the low temperature liquid phase epitaxy (LPE) technique. The SQW structures consist of a Al0.1Ga0.9As layer sandwiched by Al0.7Ga0.3As barriers Scanning electron microscopy (SEM) micro‐photograph and growth calibration curves were used to estimate the QW thickness (Lz,nom). The Al content in the barriers was measured by double crystal x‐ray diffractometry (DCD). The quantum size effects were studied by measuring the photoluminescence (PL) spectra at T=11.5 K. We make a comparison of the excitonic peak energy of the three pairs of SQW structures grown at different temperatures and growth time intervals with the calculated transition energy for the 1e−1hh exciton.
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