Abstract
Pb(ZrxTi1−x)O3 (PZT) thin films were coated on Pt∕Ti∕SiO2∕Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450°C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600°C. It is clear that single-mode 2.45GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures.
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