Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) thin films were coated onto Pt/Ti/SiO2/Si substrates by a sol–gel method and then crystallized by 2.45 GHz microwave irradiation in a magnetic field. The crystalline phases and microstructures as well as the electrical properties of the microwave-irradiated PZT films were investigated as a function of the elevated temperature generated by microwave irradiation. The perovskite PZT thin films with good electrical properties could be obtained by microwave irradiation at 650 °C for 60 s. The average values of the remanent polarization and the coercive field of the PZT films were approximately 27 µC/cm2 and 95 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 1100 and 0.18, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties in a short process time.
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