Low temperature growth of carbon nanotubes by alcohol catalytic chemical vapor deposition for field emitter applications

Abstract

Growth of carbon nanotubes (CNTs) by an alcoholic catalytic chemical vapor deposition (ACCVD) technique has attracted much attention due to its simplicity in apparatus and its ability to grow high quality CNTs. Recently, the authors have found that the ACCVD method is also available for growth of CNTs at low temperature less than 500°C, which is required for a fabrication process of field emission displays (FEDs) using CNTs as electron sources. Here the authors report results of studies that were carried out to clarify the temperature dependence of CNT growth by ACCVD technique using a Co∕Al bilayer catalyst film. The result showed that growth of CNTs at low temperature less than 450°C is possible. It was also found that formation of a Mo buffer layer between Si substrate and the catalyst film enhances CNT growth at the low growth temperature. These results imply that ACCVD technique is suitable for CNT growth method for FED fabrication process.