Abstract

ABSTRACTLow-temperature (LT) growth of InP by gas-source molecular-beam epitaxy has been studied. Contrary to GaAs, InP grown at low temperature (from 200°C to 410°C) shows ntype, low-resistivity properties. The electron concentration changes dramatically with growth temperature. A model of P antisite defects formed during LT growth was used to explain this experimental result. Ex-situ annealing can increase the resistivity, but only by a factor of about 6. Heavily Be-doped LT InP also shows n-type property. We believe this is the first report of an extremely high concentration of donors formed in LT InP and n-type doping by Be in III–V compounds.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.