Abstract
Thin film transistors (TFTs) were fabricated using microcrystalline silicon (µ c- Si) deposited by cathode-type rf glow discharge method at temperature of 400° C. It was found that the µ c- Si TFTs have high mobility compared with amorphous silicon TFTs fabricated at the same temperature region. The results suggest that the present method is also suitable for low temperature fabrication of TFTs because of high mobility and simple modification of glow discharge deposition method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have