Low Temperature Fabrication of Thin Film Transistors using Microcrystalline Si Deposited by Cathode-Type RF Glow Discharge

Abstract

Thin film transistors (TFTs) were fabricated using microcrystalline silicon (µ c- Si) deposited by cathode-type rf glow discharge method at temperature of 400° C. It was found that the µ c- Si TFTs have high mobility compared with amorphous silicon TFTs fabricated at the same temperature region. The results suggest that the present method is also suitable for low temperature fabrication of TFTs because of high mobility and simple modification of glow discharge deposition method.