Abstract
The electron mobility is calculated for Ga0.5In0.5P/GaAsquantum wells at 77 K. Deformation potential acoustic phonon and alloyscattering are assumed to be effective. Account has been taken of the energy bandnonparabolicity and extension of the wavefunction into the Ga0.5In0.5Pbarrier layer. Calculated results for Al0.3Ga0.7As/GaAsquantum wells are also presented for comparison.
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