Abstract
We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measurements. Numerous (010) β-Ga2O3 layers grown at different conditions showed peak electron mobility exceeding 104 cm2/V s at low temperature (LT), with the highest value of 11 704 cm2/V s at 46 K. The room temperature electron mobilities of the films were between 125 cm2/V s and 160 cm2/V s with the net background charge concentration between ∼5 × 1015 cm−3 and ∼2 × 1016 cm−3. The obtained LT mobility values for β-Ga2O3 were found to be comparable to or higher than the highest LT electron mobilities in bulk SiC and GaN films in the literature. The results demonstrate the capability of metalorganic chemical vapor deposition (MOCVD) for growing high quality ultrapure β-Ga2O3 epitaxial films that are suitable for high power electronic device applications.
Highlights
A clean β-Ga2O3 sample with no and low donor concentration (Nd compensation ∼ 1 × 1015 cm−3 acceptors ), an electron mobility of >104 cm2/V s can be achieved at low temperatures.[25]
The results demonstrate the capability of metalorganic chemical vapor deposition (MOCVD) for growing high quality ultrapure β-Ga2O3 epitaxial films that are suitable for high power electronic device applications
We present our recent experimental data that demonstrate the growth of superclean β-Ga2O3 epitaxial films with electron mobility over 104 cm2/V s by MOCVD
Summary
A clean β-Ga2O3 sample with no and low donor concentration (Nd compensation ∼ 1 × 1015 cm−3 acceptors ), an electron mobility of >104 cm2/V s can be achieved at low temperatures.[25]. We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition.
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