Abstract
Low-temperature aluminum nitride (AlN) depositions were studied under low gas pressure conditions of 0.1 Pa. In order to operate under 0.1 Pa sputter-conditions, the magnetic mirror-type magnetron cathode (M3C) has been developed in the authors' studies. The plasma light-emission distributions generated by the M3C were observed at an input RF power of 5–100 W and an Ar gas pressure of 0.1–0.65 Pa. The M3C can operate effectively with both low gas pressure of 0.1 Pa (Ar) and low RF power of 5 W. The AlN films were deposited using a bare silicon substrate without external substrate heating. The c-axis oriented AlN film was obtained at 0.1 Pa (pure nitrogen), 100 W, and a target-to-substrate distance of 70 mm.
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