Abstract
Effect of radio frequency (RF) power on aluminum nitride (AlN) film crystallinity has been studied under low gas pressure of 0.1 Pa and low RF power of 3 W with Ar-20%N2 gas by a proposed balanced magnetron cathode with a high plasma production efficiency. The gas pressure and the RF power dependences of AlN film crystallinity show that the c-axis oriented AlN films can be obtained only at 50 W and 100 W in 0.1 Pa. The AlN film crystallinity was not promoted in the low RF power range of <50 W. An Ar-rich sputtering condition at 0.1 Pa induced the Al–Al bonds in the deposited films in a high RF power range of 15 W. The control of the total flux balance between Al and nitrogen atoms at the substrate surface is important to design the optimum sputtering condition at 0.1 Pa.
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