Abstract
A Li–N dual-acceptor doping method has been developed to prepare p-type ZnO thin films by pulsed laser deposition. The lowest room-temperature resistivity is found to be ∼0.93Ωcm, much lower than that of Li or N monodoped ZnO films. The p-type conductivity of ZnO:(Li,N) films is very reproducible and stable, with acceptable crystal quality. The acceptor activation energy in ZnO:(Li,N) is about 95meV. ZnO-based homostructural p-n junctions were fabricated by depositing an n-type ZnO:Al layer on a p-type ZnO:(Li,N) layer, confirmed by secondary ion mass spectroscopy. The current-voltage characteristics exhibit their inherent rectifying behaviors.
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