Abstract
Non-polar p-type Ag-doped ZnO thin films were grown on r-cut sapphire substrates by pulsed laser deposition. Films deposited at a substrate temperature above 250°C were shown to be (112¯0) oriented (a-plane) according to X-ray diffraction, and maintained p-type behavior after one year according to Hall-effect measurements. Hole carrier concentrations lie in the range of 3.1×1016–5.3×1017cm−3, mobilities in the range of 0.3–1.5cm2V−1s−1, and resistivities in the range of 43–136Ωcm. Optical transmittance measurements indicate a decrease in band gap of ∼0.07–0.08eV for the p-type films. Characteristic stacking fault features were observed along the (011¯2) plane in the p-type films by transmission electron microscopy.
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