Abstract
AbstractMo/Al/Mo/Au metallization scheme was investigated to develop low‐resistance ohmic contacts on InAlN/AlN/GaN field‐effect transistor heterostructure using a pre‐metallization surface treatment with SiCl4 plasma in a reactive ion etching system and a relatively low‐temperature anneal at 650 °C. The contact resistance and specific contact resistivity were dramatically improved to as low as 0.15 Ω mm and 7.8 × 10−7 Ω cm2 at 650 °C, respectively.
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