Abstract
A metallization scheme consisting of Ti/Al/Mo/Au was utilized to develop low-resistance ohmic contacts to AlGaN/GaN heterostructure field effect transistors (HFET). A contact resistance as low as 0.20 Ωmm and a specific contact resistivity as low as 4.5 × 10 -7 Ωcm 2 were obtained using a pre-metallization surface treatment with SiCl 4 plasma at a self-bias voltage of -300 V in a reactive ion etching (RIE) system. X-ray photoelectron spectroscopy (XPS) measurements of the SiCl 4 plasma-treated surface revealed an increase in the N vacancies thereby increasing the donor concentration at the surface. Also a blue shift of the peak energy of the Ga 3d photoelectrons was observed showing that the Fermi level moved closer to the conduction band at the surface of the AlGaN.
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