Abstract
Because of its low power dissipation and small area, the dynamic semiconductor random-access memory cell is currently becoming widely used in computer main-memory applications. This paper describes an alternative bipolar memory cell which uses the small area and high yield obtainable with the collector-diffusion isolation process, without the disadvantages of the refresh requirement of dynamic memories. A ratio of 15:1 in power dissipation between the selected and the unselected state allows a large number of storage cells on a single silicon chip, while retaining a relatively fast cycle time.
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