Low-power anisotropic molecular electronic memristors

Abstract

A molecular electronic memristor, programmable resistive memory device, promises to revolutionize next-generation flexible data storage units, offering fast, dense and ultralow power solutions. Here we report anisotropic resistive switching in molecular κ-(BEDT-TTF)2Cu[N(CN)2]Cl memristors, consisting of alternatively segregated bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and Cu[N(CN)2]Cl layers. Electron resistance switching behavior controlled by charge tunneling in molecular memristors show a low set voltage of 0.5 V (10 V/cm) with the ON/OFF ratio of 2.3×103 along a-axis and a high-level endurance of 1.25×104 cycles along all axes. The findings of such molecular electronic crystals promise for low-power data storage memristors.