Abstract
This paper presents a wideband low-noise amplifier (LNA) based on active shunt feedback to alleviate the trade-off between noise performance and input matching. Low noise and high linearity are achieved by derivative superposition (DS) and complementary derivative superposition (CDS) techniques. Low power is consumed by biasing the transistors in threshold voltage and forward body biasing. With these modified techniques, low noise figure, high linearity, and improved input matching can be attained for 2–8 GHz frequency band. The simulation results of the designed LNA in TSMC RF CMOS 180 nm technology show the maximum power gain of 11 dB with a ripple of ±0.4 dB, noise figure of lower than 3.5 dB over the whole band of 2–8 GHz, maximum IIP2 of +64 dBm and IIP3 of +14 dBm, while dissipating 7 mW from a 1.4 V supply voltage. It occupies 0.247 mm*0.358 mm die area.
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