Low‐noise amplifier by using a signal‐reuse wake‐up technology

Abstract

A V-band low-power signal-reuse low-noise amplifier (SRLNA) implemented in 90 nm complementary metal-oxide-semiconductor technology is presented. The proposed SRLNA uses zero- V T and signal-reuse wake-up technologies to improve wake-up sensitivity and reduce power consumption. The SRLNA can be activated or turned off automatically based on the amplitude of the radio-frequency signal power. Time delays of the zero- V T envelope detector and limiting amplifier are analysed in order to loose the constraint on the maximum data-rate. Moreover, the relationship between noise figure (NF), power gain ( S 21 ), input and output return losses ( S 11 and S 22 ) of the SRLNA are discussed in detail, with the quality factors Q nf , Q I , Q in , and Q L defined for NF, S 21 , S 11 , and S 22 parameters derivations. The proposed SRLNA consumes 25 and 12 mW at activate and sleep modes, respectively. The sensitivity of the proposed SRLNA can achieve about -50 dBm.