Abstract
The dielectric response has been studied in 10-μm-thick, single-crystal potassium tantalate films formed by crystal ion slicing. Scanning microwave microscopy shows that the implanted, pre-etched samples exhibit a bulk-like permittivity and low-loss tangent (0.0009) at 1.7 GHz. The separated free-standing films have somewhat higher loss tangents due to residual-ion-induced stress. Selective relaxation of this stress by etching or annealing reduces the dielectric loss.
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