Abstract

Lithium Niobate (LiNbO3) films produced by the crystal ion slicing (CIS) method are introduced in various components in use in the optical telecommunications market. The CIS technique employs high-energy ion implantation to create a narrow (~0.2 micrometers ) planar layer of localized damage, buried ~10 micrometers beneath the surface of the implanted LiNbO3 wafers. This sacrificial layer allows for slicing of microns-thick LiNbO3 films, either by selective wet chemical etching or by thermal shock. The obtained films have bulk material properties and morphology suitable for integrated optics applications. Slices of X-cut LiNbO3 were used to produce zero-order wave retarders that can be inserted in slots cut into planar lightwave circuits, resulting in TE-TM polarization mode conversion with high extinction ratio (30 dB) and low excess loss (<0.1 dB). Conventional LiNbO3 waveguide fabrication techniques were combined with the CIS process to produce CIS films of Z-cut LiNbO3 with optical circuits patterned prior to lift-off, having propagation losses typical of bulk LiNbO3 waveguides. Using thin sheets of LiNbO3, velocity- and impedance-matched modulators can be fabricated with low V(pi )L(~7.6 V.cm) and low microwave losses (0.3 db/cm.GHz1/2). The CIS film optical circuits can be integrated into hybrid systems with otherwise incompatible, yet technologically important materials platforms.

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