Low Leakage Sequential MTCMOS Shift Register for Mitigation of Ground Fluctuations Noise During Complete Reactivation Process

Abstract

Multi-threshold CMOS (MTCMOS) is a well known strategy to diminish the standby current when the circuit is non operatory mode. However conventional MTCMOS strategies for limiting standby current can’t be specifically utilized as a part of sequential circuit for two reasons (i) Present ground fluctuation noise during standby mode to dynamic mode move and (ii) Absence of information maintenance ability during standby mode. Here an analysis of ground fluctuation noise because of active mode move in sequential MTCMOS design is proposed. An inventive information saving MTCMOS configuration is proposed, which not only focusing on the lessening of peak amplitude of ground fluctuation noise during mode change will likewise give an approach to control the sub-threshold current in standby mode. The proposed MTCMOS design will have stepwise turning on capabilities and also an extra hardware to additionally decrease the quick current moving through high th V transistors during move from Dream mode to Dynamic mode. Its extra current control circuits give higher decrease in peak amplitude of ground fluctuations noise (up to 98.4%) when contrasted with other comparative techniques.