Low frequency noise sources in InAlAs/InGaAs MODFET's

Abstract

In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free MODFET structures of different channel lengths. A variety of MBE grown structures was investigated: /spl delta/- and uniformly-doped MODFET's: devices with lattice-matched and strained channel. Also experiments were performed on devices with different source and drain ohmic contacts. >