Abstract
The effect of low-frequency (LF) noise sources located in various regions of the transistor on drain current in the static regime is calculated. A method for experimental evaluation of the spectral intensities of the major noise sources is proposed. Calculations are compared to experiment. The model describes the noise behavior of the MOSFET satisfactorily.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
