Abstract
Electronic noise is investigated in diamond solution-gated field effect transistors. They exhibit 1/f-type noise, which is evaluated according to Hooge’s empirical relation. Correcting for the contribution of access regions, the Hooge parameter is found to be inversely proportional to the carrier density, suggesting that the noise originates from fluctuations in the number of charge carriers. Trapping and detrapping of charge carriers at dislocations of the diamond crystal is considered the main source of noise. An effective gate voltage noise of 16 μV rms is observed, which is comparable to the noise of similar devices based on Si and GaN.
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