Abstract
Ion implantation is now indispensable process for semiconductor device fabrication. One of the key issues for the next generation LSI device fabrication is the formation of ultra shallow junction using Boron implantation. Medium current ion implanter for LSI production use can dope ions to the device wafer with accurately controlled uniformity and incident angle at a variety of energy ranges. However, the productivity of LSI at sub‐keV energy region with conventional atomic B+ implantation will quickly fall down due to the low beam current caused by the well‐known space charge limitation. To achieve a high productivity in this energy region, Decaborane (B10Hx+) implantation is supposed to be an appropriate solution. We are to review the technologies used for the commercial medium current ion implanter including Decaborane implantation for ultra shallow junction formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
